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1. general description 1.1 ampli?ers the TDF8551J has a complementary quad audio power ampli?er that uses bcdmos technology. it contains four ampli?ers con?gured in bridge-tied load (btl) to drive four speakers: two front and two rear channels. the i 2 c-bus enables diagnostic information of each ampli?er and its speaker to be read separately. both front and both rear channel ampli?ers can be con?gured independently in line driver mode with a gain of 20 db (differential output) or ampli?er mode with a gain of 26 db (btl output). 1.2 voltage regulators and switches the TDF8551J has six output voltage regulators and two power switches: ? four switchable regulators and two standby regulators ? two power switches with loss-of-ground protection and surge protection ? second supply pin to reduce dissipation by means of an external dc-to-dc converter ? backup functionality for regulator 2 2. features n ampli?ers u i 2 c-bus control u can drive a 2 w load with a battery voltage of up to 16 v and a 4 w load with a battery voltage of up to 18 v u dc load detection: open, short and present u ac load (tweeter) detection u programmable clip detect; 1 % or 3 % u programmable thermal protection pre-warning u independent short-circuit protection for each channel u selectable line driver (20 db) and ampli?er mode (26 db) u loss-of-ground and open v p safe u all outputs protected from short-circuit to ground, to v p or across the load u all pins protected from short-circuit to ground u soft thermal-clipping to prevent audio holes u low battery detection n voltage regulators and switches u i 2 c-bus control TDF8551J i 2 c-bus controlled 4 45 w power ampli?er with six voltage regulators rev. 02 18 august 2009 product data sheet
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 2 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators u good stability for any regulator with almost any output capacitor value u six voltage regulators (microcontroller, display, audio processor, tuner, bus, mechanical digital and drive) u selectable output voltages for regulators 1, 4 and 5 u low dropout voltage pnp output stages u high supply voltage ripple rejection u low noise for all regulators u two power switches (antenna switch and ampli?er switch) u standby regulators 2 and 6 (microcontroller and bus supply) operational during load dump and thermal shutdown u low standby quiescent current (regulators 2 and 6 operational only) u second supply pin for connecting optional external dc-to-dc converter to reduce internal dissipation u backup functionality for regulator 2 n protection u if connection to the battery voltage is reversed, all regulator voltages will be zero u withstands output voltages up to 18 v (supply line may be short-circuited) u thermal protection to avoid thermal breakdown u load dump protection u regulator outputs protected from dc short-circuit to ground or to supply voltage u all regulators protected by foldback current limiting u power switches protected from loss-of-ground and surge conditions 3. applications n boost ampli?er and voltage regulator for car radios and cd/md players 4. quick reference data table 1. quick reference data symbol parameter conditions min typ max unit ampli?ers v p(oper) operating supply voltage r l = 4 w [1] 8 14.4 18 v i q(tot) total quiescent current no load - 280 400 ma p o(max) maximum output power r l = 4 w ; v p = 14.4 v; v in = 2 v rms square wave 39 41 - w r l = 4 w ; v p = 15.2 v; v in = 2 v rms square wave 44 46 - w r l = 2 w ; v p = 14.4 v; v in = 2 v rms square wave 64 69 - w thd total harmonic distortion p o = 1 w to 12 w; f = 1 khz; r l =4 w - 0.01 0.1 % v n(o) output noise voltage ?lter 20 hz to 22 khz; r s = 600 w line driver mode - 25 35 m v ampli?er mode - 50 70 m v
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 3 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators [1] voltage on pin v p1 and/or pin v p2 voltage regulators v p supply voltage regulators 1, 3, 4 and 5 on; switches 1 and 2 on 10 14.4 18 v jump starts for t 10 minutes - - 30 v load dump protection for t 50 ms and t r 3 2.5 ms - - 50 v v th(dis) disable threshold voltage regulator 1, 3, 4 and 5 on; switches 1 and 2 on 18.1 22 - v v dcdc dc-to-dc converter voltage 4.75 5.0 v p v i q(tot) total quiescent current standby mode; v p = 14.4 v - 180 250 m a v o(reg) regulator output voltage regulator 1; 0.5 ma i o 400 ma; 10 v v p 18 v ib2[d3:d2] = 01 7.9 8.3 8.7 v ib2[d3:d2] = 10 8.1 8.6 9.1 v ib2[d3:d2] = 11 4.75 5.0 5.25 v regulator 2; 0.5 ma i o 350 ma; 10 v v p 18 v 3.1 3.3 3.5 v regulator 3; 0.5 ma i o 525 ma; 5 v v dcdc 18 v 3.1 3.3 3.5 v regulator 4; 0.5 ma i o 800 ma; 10 v v p 18 v ib2[d7:d5] = 001 4.75 5.0 5.25 v ib2[d7:d5] = 010 5.7 6.0 6.3 v ib2[d7:d5] = 011 6.6 7.0 7.4 v ib2[d7:d5] = 100 8.1 8.6 9.1 v ib2[d7:d5] = 101 7.6 8.0 8.4 v regulator 5; 0.5 ma i o 400 ma 10 v v p 18 v; ib1[d7:d4] = 0001 5.7 6.0 6.3 v 10 v v p 18 v; ib1[d7:d4] = 0010 6.65 7.0 7.37 v 10 v v p 18 v; ib1[d7:d4] = 0011 7.8 8.2 8.6 v 10.5 v v p 18 v; ib1[d7:d4] = 0100 8.55 9.0 9.45 v 11 v v p 18 v; ib1[d7:d4] = 0101 9.0 9.5 10.0 v 11.5 v v p 18 v; ib1[d7:d4] = 0110 9.5 10.0 10.5 v 13 v v p 18 v; ib1[d7:d4] = 0111 9.9 10.4 10.9 v 14.2 v v p 18 v; ib1[d7:d4] = 1000 11.8 12.5 13.2 v 12.5 v v p 18 v; ib1[d7:d4] = 1001 v p - 1v p - 0.5 - v 10 v v p 18 v; ib1[d7:d4] = 1010 4.75 5.0 5.25 v 10 v v p 18 v; ib1[d7:d4] = 1011 3.1 3.3 3.5 v regulator 6; 0.5 ma i o 100 ma; 10 v v p 18 v 4.75 5.0 5.25 v power switches v do dropout voltage switch 1; i o = 400 ma - 0.6 1.1 v switch 2; i o = 400 ma - 0.6 1.1 v table 1. quick reference data continued symbol parameter conditions min typ max unit
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 4 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 5. ordering information table 2. ordering information type number package name description version TDF8551J dbs37p plastic dil-bent-sil power package; 37 leads (lead length 6.8 mm) sot725-1
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 5 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 6. block diagram fig 1. block diagram 001aaj105 backup switch enable logic TDF8551J standby/mute i 2 c-bus interface clip detect/diagnostic regulator 1 regulator 3 regulator 2 regulator 4 regulator 5 switch 1 switch 2 mute protection/ diagnostic 26 db/ 20 db protection/ diagnostic 26 db/ 20 db protection/ diagnostic 26 db/ 20 db protection/ diagnostic 26 db/ 20 db mute mute mute 35 26 27 20 6 25 9 7 17 19 5 3 21 23 16 8 13 sgnd svr in4 in3 in2 in1 stb scl sda v p v dcdc bucap acgnd pgnd1 pgnd3 pgnd4 10 14 12 15 11 22 4 2 1 18 24 32 29 34 33 31 30 37 reg2 regulator 6 28 reg6 reg1 reg3 reg4 reg5 sw1 sw2 v p1 diag out1+ out1 - out2+ out2 - out3+ out3 - out4+ out4 - v p2 gnd 36 v p reference voltage temperature and load dump protection voltage regulator temperature and load dump protection amplifier pgnd2/tab
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 6 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 7. pinning information 7.1 pinning fig 2. pin con?guration TDF8551J pgnd2/tab sda out3 - scl out3+ v p2 out1 - pgnd1 out1+ svr in1 in3 sgnd in4 in2 acgnd out2+ pgnd3 out2 - v p1 out4+ stb out4 - pgnd4 diag v dcdc sw2 reg6 sw1 reg1 reg3 gnd 001aaj106 reg4 reg5 v p bucap reg2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 7 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 7.2 pin description table 3. pin description symbol pin description pgnd2/tab 1 power ground 2 and connection for heatsink sda 2 i 2 c-bus data input and output out3 - 3 channel 3 negative output scl 4 i 2 c-bus clock input out3+ 5 channel 3 positive output v p2 6 power supply voltage 2 to ampli?ers out1 - 7 channel 1 negative output pgnd1 8 power ground 1 out1+ 9 channel 1 positive output svr 10 half supply voltage ?lter capacitor in1 11 channel 1 input in3 12 channel 3 input sgnd 13 signal ground in4 14 channel 4 input in2 15 channel 2 input acgnd 16 ac ground out2+ 17 channel 2 positive output pgnd3 18 power ground 3 out2 - 19 channel 2 negative output v p1 20 power supply voltage 1 to ampli?ers out4+ 21 channel 4 positive output stb 22 standby, operating or mute mode select input out4 - 23 channel 4 negative output pgnd4 24 power ground 4 dia g 25 diagnostic and clip detection output, active-low v dcdc 26 power supply voltage from optional dc-to-dc converter sw2 27 antenna switch; supplies unregulated power to car aerial motor reg6 28 regulator 6 output; supply for bus controller sw1 29 ampli?er switch; supplies unregulated power to ampli?ers reg1 30 regulator 1 output; supply for audio part of radio and cd player reg3 31 regulator 3 output; supply for signal processor part (mechanical digital) of cd player gnd 32 combined voltage regulator, power and signal ground reg4 33 regulator 4 output; supply for mechanical part (mechanical drive) of cd player reg5 34 regulator 5 output; supply for display part of radio and cd player v p 35 power supply to voltage regulators bucap 36 connection for backup capacitor reg2 37 regulator 2 output; supply voltage to microcontroller
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 8 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 8. functional description the TDF8551J is an ic which provides six voltage regulators in combination with four independent, btl con?gured, power ampli?ers and diagnostic capabilities. all regulator output voltages except regulators 2 and 6 can be controlled via the i 2 c-bus. the ampli?er diagnostic functions give information about output offset, load, or short-circuit. the diagnostic functions are controlled using the i 2 c-bus. the TDF8551J is protected against short-circuit, overtemperature, open ground and open v p connections. if a short-circuit occurs at the output of a single ampli?er, that channel shuts down and the other channels continue to operate normally. the short-circuited channel can be switched off by the microcontroller using the appropriate enable bit of the i 2 c-bus to prevent any noise generated by the fault condition from being heard. 8.1 start-up at power on, regulators 2 and 6 reach their ?nal voltage when the backup capacitor voltage exceeds 5.5 v, independently of the voltage on pin stb. when pin stb is low, the total quiescent current is low and the i 2 c-bus lines are high-impedance. when pin stb is high, the i 2 c-bus is biased on and the TDF8551J performs a power-on reset. when bit ib1[d0] is set, the ampli?er is activated, db2[d7] (power-on reset occurred) is reset and pin dia g is no longer held low. 8.2 start-up and shutdown timing see figure 12 . a capacitor connected to pin svr enables smooth start-up and shutdown, preventing the ampli?er from producing audible clicks at switch-on or switch-off. the start-up and shutdown times can be extended by increasing the capacitor value. if the ampli?er is shutdown using pin stb, it is muted, the regulators and switches are switched off, and the capacitor connected to pin svr discharges. the low-current standby mode is activated 2 seconds after pin stb goes low. 8.3 power-on reset and supply voltage spikes see figure 13 and figure 14 . if the supply voltage drops too low to guarantee the integrity of the data in the i 2 c-bus latches, the power-on reset cycle will start. all latches will be set to a prede?ned state, pin dia g will be pulled low to indicate that a power-on reset has occurred, and bit db2[d7] is also set for the same reason. when ib1[d0] is set, the power-on ?ag resets, pin dia g is released and the ampli?er enters its start-up cycle. 8.4 diagnostic output pin dia g indicates clipping, thermal protection pre-warning of ampli?er and voltage regulator parts, short-circuit protection and low and high battery voltage. pin dia g is an active-low, open-drain output which must be connected to an external voltage using an external pull-up resistor. if a failure occurs, pin dia g remains low during the failure and no clipping information is available. the microcontroller can read the failure information using the i 2 c-bus.
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 9 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 8.5 ampli?ers 8.5.1 muting both a hard mute and a soft mute can be performed using the i 2 c-bus. a hard mute mutes the ampli?er within 0.5 ms. a soft mute mutes the ampli?er within 20 ms and is less audible. a hard mute is also activated if a voltage of 8 v is applied to pin stb. 8.5.2 temperature protection if the average junction temperature rises to the temperature trigger value that has been set using the i 2 c-bus, a thermal protection pre-warning is activated making pin dia g low. if the temperature continues to rise, all four channels are muted to reduce the output power (soft thermal clipping). however, the value at which the temperature mute control activates is ?xed; only the temperature at which the thermal protection pre-warning signal occurs can be speci?ed by bit ib3[d4]. if applying the temperature mute control does not reduce the average junction temperature, all the power stages will be switched off (muted) at the absolute maximum temperature t j(max) . 8.5.3 offset detection offset detection can only be performed when there is no input signal to the ampli?ers, for instance when the external digital signal processor is muted after a start-up. the output voltage of each channel is measured and compared with a reference voltage. if the output voltage of a channel is greater than the reference voltage, bit d2 of the associated data byte is set and read by the microcontroller during a read instruction. note that the value of this bit is only meaningful when there is no input signal and the ampli?er is not muted. offset detection is always enabled. 8.5.4 speaker protection if one side of a speaker is connected to ground, the missing current protection is triggered to prevent damage to the speaker. a fault condition is detected in a channel when there is a mismatch between the power current in the high-side and the power current in the low-side; during a fault condition the channel will be switched off. the load status of each channel can be read using the i 2 c-bus: short to ground (one side of the speaker connected to ground), short to v p (one side of the speaker connected to v p ) and shorted load. 8.5.5 line driver mode an ampli?er can be used as a line-driver by switching it to low-gain mode. in normal mode, the gain between single-ended input and differential output (across the load) is 26 db. in low-gain mode the gain between single-ended input and differential output is 20 db. 8.5.6 input and ac ground capacitor values the negative inputs to all four ampli?er channels are combined at pin acgnd. to obtain the best performance of supply voltage ripple rejection and unwanted audible noise, the value of the capacitor connected to pin acgnd must be as close as possible to 4 times the value of the input capacitor connected to the positive input of each channel.
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 10 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 8.5.7 load detection 8.5.7.1 dc load detection when dc load detection is enabled, during the start-up cycle, a dc-offset is applied slowly to the ampli?er outputs and the output currents are measured. if the output current of an ampli?er rises above a certain level, it is assumed that there is a load of less than 6 w and bit d5 is reset in the associated data byte register to indicate that a load is detected. the offset is measured during the ampli?er start-up cycle which means detection is inaudible and can be performed every time the ampli?er is switched on. 8.5.7.2 ac load detection ac load detection can be used to detect that ac-coupled speakers are connected correctly during assembly. this requires at least 3 periods of a 19 khz sine wave to be applied to the ampli?er inputs. the ampli?er produces a peak output voltage which also generates a peak output current through the ac-coupled speaker. the 19 khz sine wave is also audible during the test. if the ampli?er detects three current peaks that are greater than 550 ma, the ac load detection bit is set. three current peaks are counted to avoid false ac load detection which can occur if the input signal is switched on and off. the peak current counter can be reset by setting bit ib1[d1] to logic 0. to guarantee ac load detection, an ampli?er current of more than 550 ma is required. ac load detection never occurs with a current of less than 150 ma. figure 3 shows which ac loads are detected at different output voltages. for example, if a load is detected at an output voltage of 2.5 v peak, the load is less than 4 w . if no load is detected, the output impedance is more than 14 w . (1) i om = < 150 ma. (2) i om = > 550 ma. fig 3. tolerance of ac load detection as a function of output voltage 001aai691 10 10 2 z l ( w ) 1 v om (v) 010 7.5 2.5 5 (2) (1) no load present load present undefined
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 11 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 8.5.7.3 load detection procedure 1. at start-up, enable the ac or dc load detection by setting bit ib1[d1] to logic 1. 2. after 250 ms the dc load is detected and the mute is released. this is inaudible and can be implemented each time the ic is powered on. 3. when the ampli?er start-up cycle is completed (after 1.5 s), apply an ac signal to the input, and dc load bits d5 of each data byte should be read and stored by the microcontroller. 4. after at least 3 periods of the input signal, the load status can be checked by reading ac detect bits d4 of each data byte. the ac load peak current counter can be reset by setting bit ib1[d1] to logic 0 and then to logic 1. note that this will also reset the dc load detection bits d5 in each data byte. 8.5.8 low headroom protection the normal dc output voltage of the ampli?er is set to half the supply voltage and is related to the voltage on pin svr. an external capacitor is connected to pin svr to suppress power supply ripple. if the supply voltage drops (at vehicle engine start), the dc output voltage will follow slowly due to the affect of the svr capacitor. the headroom voltage is the voltage required for correct operation of the ampli?er and is de?ned as the voltage difference between the level of the dc output voltage before the v p voltage drop and the level of v p after the voltage drop (see figure 4 ). at a certain supply voltage drop, the headroom voltage will be insuf?cient for correct operation of the ampli?er. to prevent unwanted audible noises at the output, the headroom protection mode will be activated (see figure 4 ). this protection discharges the capacitors connected to pins svr and acgnd to increase the headroom voltage. 8.6 voltage regulators and switches the TDF8551J has six output voltage regulators and two power switches: ? four switchable regulators and two standby regulators ? two power switches with loss-of-ground protection and surge protection fig 4. ampli?er output during supply voltage drop supply (v) t (s) svr voltage vehicle engine start headroom voltage amplifier dc output voltage v p 001aai692 14 8.4 7
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 12 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators ? second supply pin to reduce dissipation by means of an external dc-to-dc converter ? backup functionality for regulator 2 the TDF8551J uses low dropout voltage regulators for use in low voltage applications. all of the voltage regulators except for the standby regulators can be controlled using the i 2 c-bus. the TDF8551J also has two power switches which can deliver unregulated continuous current and several fail-safe protection modes. it conforms to peak transient tests and protects against continuous high voltage (24 v), short-circuits and thermal stress. standby regulators 2 and 6 will try to maintain output for as long as possible even if a thermal shutdown or any other fault condition occurs. during overvoltage stress conditions, all outputs except regulators 2 and 6 will switch-off and the device will be able to supply a minimum current for an inde?nite amount of time suf?cient for powering the memory of a microcontroller and bus controller functionality. provision is made for an external reserve supply capacitor to be connected to pin bucap which can store enough energy to allow regulator 2 to supply a microcontroller for a period long enough for it to prepare for a loss-of-voltage. 8.6.1 standby regulator outputs standby outputs (regulators 2 and 6) are used for the microcontroller and bus controller supply. these regulators will not shutdown with the switched regulators and cannot be controlled by the i 2 c-bus. the standby regulators will not shutdown during load dump transients or by high temperature protection. 8.6.2 backup capacitor a backup capacitor (c backup ) is used as a backup supply for the regulator 2 output when the battery supply voltage (v p ) cannot support the regulator 2 voltage. 8.6.3 backup function the backup function is implemented by a switch function, which behaves like an ideal diode between pins v p and bucap; the forward voltage of this ideal diode depends on the current ?owing through it. the backup function supplies regulator 2 during brief periods when no supply voltage is present on pin v p . it requires an external capacitor to be connected to pin bucap and ground. when the supply voltage is present on pin v p this capacitor will be charged to a level of v p - 0.3 v. when the supply voltage is absent from pin v p , this charge can then be used to supply regulator 2 for a brief period (t backup ) calculated using the formula: (1) example: v p = 14.4 v, v reg2 (voltage on pin reg2) = 3.3 v, r l =1k w and c backup = 100 m f provides a t backup of 321 ms. when an overvoltage condition occurs, the voltage on pin bucap is limited to approximately 24 v; see figure 5 . t backup c backup r l v p v reg2 0.5 C () C v reg2 ----------------------------------------------- ? ?? =
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 13 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 8.6.4 power switches there are two power switches that provide an unregulated dc voltage output for ampli?ers and an aerial motor respectively. the switches have internal protection for overtemperature conditions and are activated by setting bits ib1[d2] and ib1[d3] to logic 1. in the on state, the switches have a low impedance to the battery voltage. when the battery voltage is higher than 22 v, the switches are switched off. when the battery voltage is below 22 v the switches are set to their original condition. the power switches have built-in surge protection to be able to absorb energy from switching inductive or capacitive external loads. this surge protection is implemented in such a way that in case no supply (v p ) is present the supply line will not be charged from a possible external source connected to a power switch output. 8.6.5 external dc-to-dc converter the v dcdc supply pin can be connected to an external dc-to-dc down converter (v o 3 5 v) to reduce the dissipation in regulator 3. if no external dc-to-dc converter is used, the v dcdc pin must be connected to v p . 8.6.6 protection all regulator and switch outputs are fully protected by foldback current limiting against load dumps and short-circuits; see figure 6 . during a load dump all regulator outputs, except the output of regulators 2 and 6, will go low. the power switches can withstand loss-of-ground. this means that if pin gnd becomes disconnected, the switch is protected by automatically connecting its outputs to ground. 8.6.7 temperature protection if the junction temperature of a regulator becomes too high, the ampli?er(s) are switched off to prevent unwanted noise signals being audible. a regulator junction temperature that is too high is indicated by pin dia g going low and is also indicated by setting bit db2[d6]. fig 5. backup capacitor function supply (v) t (s) t backup out of regulation v reg2 v bucap v p 001aai693 t backup c backup v p v reg2 0.5 C () C i load ----------------------------------------------- - ? ?? =
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 14 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators if the junction temperature of the regulator continues to rise and reaches the maximum temperature protection level, all regulators and switches will be disabled except regulators 2 and 6. 8.7 i 2 c-bus speci?cation if address byte bit r/ w = 0, the TDF8551J expects three instruction bytes: ib1, ib2 and ib3; see t ab le 1 to t ab le 6 . after a power-on, all instruction bits are set to zero. if address byte bit r/ w = 1, the TDF8551J will send four data bytes to the microcontroller: db1, db2, db3 and db4; see t ab le 7 to t ab le 10 . fig 6. foldback current protection v regn i os i olim i regn 001aai698 fig 7. address byte fig 8. de?nition of start and stop conditions mdb516 msb lsb 0 = write 1 = read 1 1 0 1 1 0 0 r/w mba608 sda scl p stop condition s start condition
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 15 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators fig 9. bit transfer mba607 data line stable; data valid change of data allowed sda scl fig 10. i 2 c-bus read and write modes 001aaj256 ack msb msb - 1 msb msb - 1 lsb + 1 lsb lsb + 1 12 78912 789 12 78912 789 : generated by master (microcontroller) to stop the transfer, after the last acknowledge (a) a stop condition (p) must be generated to stop the transfer, the last byte must not be acknowledged and a stop condition (p) must be generated : generated by slave : start : stop : acknowledge : read / write s p a r/w scl sda scl sda ack ack msb msb - 1 msb msb - 1 lsb + 1 lsb lsb + 1 ack sa a ap ap address write data read data w s address r i 2 c-bus write i 2 c-bus read table 4. instruction byte ib1 bit description bit symbol description 7 d7 regulator 5 output voltage control; see t ab le 5 6d6 5d5 4d4 3 d3 sw2 control 0 = sw2 off 1 = sw2 on
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 16 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 2 d2 sw1 control 0 = sw1 off 1 = sw1 on 1 d1 ac load or dc load detection switch 0 = ac load or dc load detection off; resets dc load detection bits and ac load detection peak current counter 1 = ac load or dc load detection on 0 d0 ampli?er start enable (clear power-on reset ?ag db2[d7]) 0 = ampli?er off; pin dia g remains low 1 = ampli?er on; when power-on occurs, bit db2[d7] is reset and pin dia g is released table 5. regulator 5 (display) output voltage control bit output (v) d7 d6 d5 d4 00000 (off) 00016.0 00107.0 00118.2 01009.0 01019.5 0110 10.0 0111 10.4 1000 12.5 1001 v p - 1 (switch) 10105.0 10113.3 table 6. instruction byte ib2 bit description bit symbol description 7 d7 regulator 4 output voltage control; see t ab le 7 6d6 5d5 4 d4 regulator 3 (mechanical digital) control 0 = regulator 3 off 1 = regulator 3 on 3 d3 regulator 1 output voltage control; see t ab le 8 2d2 1 d1 soft mute all ampli?er channels (mute delay 20 ms) 0 = mute off 1 = mute on table 4. instruction byte ib1 bit description continued bit symbol description
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 17 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 0 d0 hard mute all ampli?er channels (mute delay 0.4 ms) 0 = mute off 1 = mute on table 7. regulator 4 (mechanical drive) output voltage control bit output (v) d7 d6 d5 0000 (off) 0015 0106 0117 1008.6 1018.0 table 8. regulator 1 (audio) output voltage control bit output (v) d3 d2 0 0 0 (off) 0 1 8.3 1 0 8.6 1 1 5.0 table 9. instruction byte ib3 bit description bit symbol description 7 d7 clip detection level 0 = 3 % detection level 1 = 1 % detection level 6 d6 ampli?er channels 1 and 2 gain select 0 = 26 db gain (normal mode) 1 = 20 db gain (line-driver mode) 5 d5 ampli?er channels 3 and 4 gain select 0 = 26 db gain (normal mode) 1 = 20 db gain (line-driver mode) 4 d4 ampli?er thermal protection pre-warning 0 = warning at 145 c 1 = warning at 122 c 3 d3 disable channel 1 0 = enable channel 1 1 = disable channel 1 table 6. instruction byte ib2 bit description continued bit symbol description
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 18 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 2 d2 disable channel 2 0 = enable channel 2 1 = disable channel 2 1 d1 disable channel 3 0 = enable channel 3 1 = disable channel 3 0 d0 disable channel 4 0 = enable channel 4 1 = disable channel 4 table 10. instruction byte db1 bit description bit symbol description 7 d7 ampli?er thermal protection pre-warning 0 = no warning 1 = junction temperature above pre-warning level 6 d6 ampli?er maximum thermal protection 0 = junction temperature below 175 c 1 = junction temperature above 175 c 5 d5 channel 4 dc load detection 0 = dc load detected 1 = no dc load detected 4 d4 channel 4 ac load detection 0 = no ac load detected 1 = ac load detected 3 d3 channel 4 load short-circuit 0 = normal load 1 = short-circuit load 2 d2 channel 4 output offset 0 = no output offset 1 = output offset 1 d1 channel 4 v p short-circuit 0 = no short-circuit to v p 1 = short-circuit to v p 0 d0 channel 4 short-circuit to ground 0 = no short-circuit to ground 1 = short-circuit to ground table 9. instruction byte ib3 bit description continued bit symbol description
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 19 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators table 11. data byte db2 bit description bit symbol description 7 d7 power-on reset occurred or ampli?er status 0 = ampli?er on 1 = por has occurred; ampli?er off 6 d6 regulator thermal protection pre-warning 0 = no warning 1 = regulator temperature too high; ampli?er off 5 d5 channel 3 dc load detection 0 = dc load detected 1 = no dc load detected 4 d4 channel 3 ac load detection 0 = no ac load detected 1 = ac load detected 3 d3 channel 3 load short-circuit 0 = normal load 1 = short-circuit load 2 d2 channel 3 output offset 0 = no output offset 1 = output offset 1 d1 channel 3 v p short-circuit 0 = no short-circuit to v p 1 = short-circuit to v p 0 d0 channel 3 short-circuit to ground 0 = no short-circuit to ground 1 = short-circuit to ground table 12. data byte db3 bit description bit symbol description 7d7 - 6d6 - 5 d5 channel 2 dc load detection 0 = dc load detected 1 = no dc load detected 4 d4 channel 2 ac load detection 0 = no ac load detected 1 = ac load detected 3 d3 channel 2 load short-circuit 0 = normal load 1 = short-circuit load 2 d2 channel 2 output offset 0 = no output offset 1 = output offset
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 20 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 9. limiting values 1 d1 channel 2 v p short-circuit 0 = no short-circuit to v p 1 = short-circuit to v p 0 d0 channel 2 short-circuit to ground 0 = no short-circuit to ground 1 = short-circuit to ground table 13. data byte db4 bit description bit symbol description 7d7 - 6d6 - 5 d5 channel 1 dc load detection 0 = dc load detected 1 = no dc load detected 4 d4 channel 1 ac load detected 0 = no ac load detected 1 = ac load detected 3 d3 channel 1 load short-circuit 0 = normal load 1 = short-circuit load 2 d2 channel 1 output offset 0 = no output offset 1 = output offset 1 d1 channel 1 short-circuit to v p 0 = no short-circuit to v p 1 = short-circuit to v p 0 d0 channel 1 short-circuit to ground 0 = no short-circuit to ground 1 = short-circuit to ground table 12. data byte db3 bit description continued bit symbol description table 14. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit v p supply voltage operating - 18 v not operating - 1 +50 v jump starts for t 10 minutes -30v load dump protection for t 50 ms and t r 3 2.5 ms 050v v sda voltage on pin sda operating 0 7 v
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 21 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators [1] human body model: r s = 1.5 k w ; c = 100 pf; all pins have passed all tests to 2500 v to guarantee 2000 v, according to class ii. [2] machine model: r s =10 w ; c = 200 pf; l = 0.75 mh; all pins have passed all tests to 250 v to guarantee 200 v, according to class ii. 10. thermal characteristics 10.1 quality speci?cation in accordance with general quality speci?cation for integrated circuits snw-fq-611d . v scl voltage on pin scl operating 0 7 v v i input voltage pins inn, svr, acgnd, dia g, operating 013v v stb voltage on pin stb operating 0 24 v i osm non-repetitive peak output current - 10 a i orm repetitive peak output current - 6 a v p(sc) short-circuit supply voltage across output pin loads and to ground or supply (ac and dc) -18v v p(r) reverse supply voltage voltage regulator only - - 18 v p tot total power dissipation t case =70 c - 80 w t j junction temperature - 150 c t stg storage temperature - 55 +150 c t amb ambient temperature - 40 +85 c v esd electrostatic discharge voltage [1] - 2000 v [2] - 200 v table 14. limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit table 15. thermal characteristics symbol parameter conditions typ unit r th(j-a) thermal resistance from junction to ambient in free air 40 k/w r th(j-c) thermal resistance from junction to case see figure 11 0.75 k/w fig 11. equivalent thermal resistance network mdb514 amplifier 0.5 k/w 0.2 k/w 1 k/w voltage regulator virtual junction case
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 22 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 11. characteristics table 16. characteristics t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit ampli?er supply voltage behavior v p(oper) operating supply voltage r l =4 w 8 14.4 18 v r l =2 w 8 14.4 16 v i q(tot) total quiescent current no load - 280 400 ma i stb standby current - 10 50 m a v o output voltage dc - 7.2 - v v p(low)(mute) low supply voltage mute 6.5 7 8 v v hr headroom voltage when headroom protection is activated; see figure 4 - 1.4 - v v por power-on reset voltage see figure 13 - 5.5 - v v o(offset) output offset voltage mute mode and power on - 100 0 +100 mv mode select (pin stb) v stb voltage on pin stb standby mode - - 1.3 v operating mode 2.5 - 5.5 v mute mode 8 - v p v i i input current v stb =5v - 4 25 m a start-up, shutdown and mute timing t wake wake-up time from standby before ?rst i 2 c-bus transmission is recognized; via pin stb; see figure 12 - 300 500 m s t d(mute_off) mute off delay time via i 2 c-bus ib1[d0]; c svr =22 m f; see figure 12 - 250 - ms t d(mute-on) delay time from mute to on soft mute; via i 2 c-bus ib2[d1] = 1 to 0 10 25 40 ms hard mute; via i 2 c-bus ib2[d0] = 1 to 0 10 25 40 ms via pin stb; v stb =8vto4v 10 25 40 ms t d(on-mute) delay time from on to mute soft mute; via i 2 c-bus ib2[d1] = 0 to 1 10 25 40 ms hard mute; via i 2 c-bus ib2[d0] = 0 to 1 - 0.4 1 ms via pin stb; v stb =4vto8v - 0.4 1 ms i 2 c-bus interface v il low-level input voltage on pins scl and sda - - 1.5 v v ih high-level input voltage on pins scl and sda 2.3 - 5.5 v v ol low-level output voltage on pin sda; i load = 3 ma - - 0.4 v f scl scl clock frequency - - 400 khz
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 23 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators ampli?er diagnostics v ol(diag_n) low-level output voltage on pin dia g fault condition (pin low); i diag_n = 200 m a - - 0.8 v v o(offset) output offset voltage 1.5 2 2.5 v thd clip total harmonic distortion clip detection level ib3[d7] = 0 - 3 - % ib3[d7] = 1 - 1 - % t j(av)(pwarn) pre-warning average junction temperature ib3[d4] = 0 135 145 155 c ib3[d4] = 1 112 122 132 c t j(av)(mute) mute average junction temperature v in = 0.05 v; - 3 db muting 150 160 170 c t j(av)(off) average junction temperature for off all outputs switched off 165 175 185 c z l load impedance dc load detected - - 6 w no dc load detected 500 - - w i det(load) load detection current ac load detected 550 - - ma no ac load detected - - 150 ma ampli?er p o output power r l =4 w ; v p = 14.4 v; thd = 0.5 % 18 19 - w r l =4 w ; v p = 14.4 v; thd=10% 25 26 - w r l =2 w ; v p = 14.4 v; thd = 0.5 % 27 31 - w r l =2 w ; v p = 14.4 v; thd=10% 40 44 - w p o(max) maximum output power r l =4 w ; v p = 14.4 v; v in = 2 v rms square wave 39 41 - w r l =4 w ; v p = 15.2 v; v in = 2 v rms square wave 44 46 - w r l =2 w ; v p = 14.4 v; v in = 2 v rms square wave 64 69 - w thd total harmonic distortion p o = 1 w to 12 w; f = 1 khz; r l =4 w - 0.01 0.1 % p o = 1 w to 12 w; f = 10 khz - 0.2 0.5 % p o = 4 w; f = 1 khz - 0.01 0.03 % line driver mode; v o = 2 v (rms); f = 1 khz; r l = 600 w - 0.01 0.03 % a cs channel separation f = 1 hz to 10 khz; r s = 600 w 50 60 - db p o = 4 w; f = 1 khz - 80 - db svrr supply voltage rejection ratio f = 100 hz to 10 khz; r s = 600 w 55 70 - db cmrr common mode rejection ratio ampli?er mode; v cm = 0.3 v (p-p); f = 1 khz to 3 khz; r s =0 w 40 70 - db table 16. characteristics continued t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 24 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators v cm(max)(rms) maximum common mode voltage (rms value) f = 1 khz - - 0.6 v v n(o) output noise voltage ?lter 20 hz to 22 khz; r s = 600 w line driver mode - 25 35 m v ampli?er mode - 50 70 m v g v(amp) voltage gain ampli?er mode single-ended in to differential out 25 26 27 db g v(ld) voltage gain line driver mode single-ended in to differential out 19 20 21 db z i input impedance c in = 220 nf 55 70 - k w a mute mute attenuation v o(on) /v o(mute) 80 90 - db v o(mute) mute output voltage v i =1vrms - 70 - m v b p power bandwidth - 1 db; thd = 1 % - 20 - khz voltage regulators v p supply voltage regulator 1, 3, 4 and 5 on; switches 1 and 2 on 10.0 14.4 18 v standby regulator 2 in regulation 5.0 - 50 v standby regulator 6 in regulation 6.0 - 50 v v th(dis) disable threshold voltage regulator 1, 3, 4 and 5 on; switches 1 and 2 on 18.1 22 - v v dcdc dc-to-dc converter voltage 4.75 5.0 v p v i q(tot) total quiescent current standby mode; v p = 14.4 v [1] - 180 250 m a regulator 1 audio supply: pin reg1; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 400 ma; 10 v < v p <18v ib2[d3:d2] = 01 7.9 8.3 8.7 v ib2[d3:d2] = 10 8.1 8.6 9.1 v ib2[d3:d2] = 11 4.75 5.0 5.25 v svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 50 60 - db v do dropout voltage v p = 7 v; ib2[d3:d2] = 01 [3] i o = 300 ma - 0.5 0.8 v i o = 400 ma - 0.7 1.2 v i o output current v o 3 4v [4] 400 700 - ma i os output short-circuit current r l 0.5 w [5] 100 200 - ma line regulation d v o output voltage variation 10 v v p 18 v - - 50 mv load regulation d v o output voltage variation 5 ma i o 400 ma - - 100 mv table 16. characteristics continued t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 25 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators regulator 2 microprocessor supply: pin reg2; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 350 ma; 10 v v p 18 v 3.1 3.3 3.5 v svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 40 50 - db v do dropout voltage v bucap = 4.75 v [6] [8] i o = 350 ma - 1.45 2.0 v i o output current v o 3 2.8 v [4] 350 1000 - ma i os output short-circuit current r l 0.5 w [5] 160 300 - ma line regulation d v o output voltage variation 10 v v p 18 v - 50 mv load regulation d v o output voltage variation 0.5 ma i o 350 ma - - 100 mv regulator 3 mechanical digital supply: pin reg3; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 525 ma; 10 v v p 18 v 5v v dcdc 18 v [9] 3.1 3.3 3.5 v svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 50 65 - db v do dropout voltage v dcdc = 4.75 v; i o = 525 ma [2] [8] - 1.45 2.0 v i o output current v o 3 2.8 v [4] 525 900 - ma i os output short-circuit current r l 0.5 w [5] 180 350 - ma line regulation d v o output voltage variation 5 v v dcdc 18 v - 3 50 mv load regulation d v o output voltage variation 0.5 ma i o 525 ma - - 100 mv regulator 4 mechanical drive supply: pin reg4; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 800 ma; 10 v v p 18 v ib2[d7:d5] = 001 4.75 5.0 5.25 v ib2[d7:d5] = 010 5.7 6.0 6.3 v ib2[d7:d5] = 011 6.6 7.0 7.4 v ib2[d7:d5] = 100 8.1 8.6 9.1 v ib2[d7:d5] = 101 7.6 8.0 8.4 v svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 50 65 - db v do dropout voltage v p = 7 v; ib2[d7:d5] = 011 [3] i o = 500 ma - 0.5 0.8 v i o = 800 ma - 0.7 1.2 v i om peak output current t 3 s; v o =4v 1 1.5 - a i o output current v o 3 4 v; t 100 ms; v p 3 11.5 v [4] 1.5 2 - a table 16. characteristics continued t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 26 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators i os output short-circuit current r l 0.5 w [5] 240 400 - ma line regulation d v o output voltage variation 10 v v p 18 v - 3 50 mv load regulation d v o output voltage variation 0.5 ma i o 800 ma - - 100 mv regulator 5 display supply: pin reg5; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 400 ma 10 v v p 18 v; ib1[d7:d4] = 0001 5.7 6.0 6.3 v 10 v v p 18 v; ib1[d7:d4] = 0010 6.65 7.0 7.37 v 10 v v p 18 v; ib1[d7:d4] = 0011 7.8 8.2 8.6 v 10.5 v v p 18 v; ib1[d7:d4] = 0100 8.55 9.0 9.45 v 11 v v p 18 v; ib1[d7:d4] = 0101 9.0 9.5 10.0 v 11.5 v v p 18 v; ib1[d7:d4] = 0110 9.5 10.0 10.5 v 13 v v p 18 v; ib1[d7:d4] = 0111 9.9 10.4 10.9 v 14.2 v v p 18 v; ib1[d7:d4] = 1000 11.8 12.5 13.2 v 12.5 v v p 18 v; ib1[d7:d4] = 1001 v p - 1v p - 0.5 - v 10 v v p 18 v; ib1[d7:d4] = 1010 4.75 5.0 5.25 v 10 v v p 18 v; ib1[d7:d4] = 1011 3.1 3.3 3.5 v svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 50 60 - db v do dropout voltage v p = 7 v; ib1[d7:d4] = 0010 [3] i o = 300 ma - 0.5 0.8 v i o = 400 ma - 0.7 1.2 v i o output current v o 3 2.8 v [4] 400 900 - ma i os output short-circuit current r l 0.5 w [5] 150 300 - ma line regulation d v o output voltage variation 10 v v p 18 v - 3 50 mv load regulation d v o output voltage variation 0.5 ma i o 400 ma - - 100 mv regulator 6 bus control supply: pin reg6; i o = 5 ma unless otherwise speci?ed v o(reg) regulator output voltage 0.5 ma i o 100 ma; 10 v v p 18 v 4.75 5.0 5.25 v table 16. characteristics continued t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 27 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators [1] the quiescent current is measured in standby mode when r l = . [2] the dropout voltage of regulator 3 is the voltage difference between v dcdc and v o(reg) . [3] the dropout voltage of a regulator is the voltage difference between v p and v o(reg) . [4] at current limit, v o(reg) is held constant; see figure 6 . [5] the foldback current protection limits the dissipation power at short-circuit; see figure 6 . [6] the dropout voltage of regulator 2 is the voltage difference between v bucap and v o(reg) . [7] unbiased switch-supply i l is measured in supply line v p . [8] regulator output still in regulation at applied test voltage, therefore the actual dropout voltage can not be measured. [9] the current capability of regulator 3 is suf?cient to drive nxp semiconductors dsp devices saf7730, saf7740 or saf7741. svrr supply voltage rejection ratio f ripple = 120 hz; v ripple = 2 v (p-p) 40 50 - db v do dropout voltage v p = 4.75 v; i o = 100 ma [3] - 0.4 0.8 v i o output current v o > 4.0 v [4] 150 350 - ma i os output short-circuit current r l < 0.5 w [5] 50 125 - ma line regulation d v o output voltage variation 10 v v p 18 v - 3 50 mv load regulation d v o output voltage variation 0.5 ma i o 100 ma - - 100 mv power switch 1 antenna: pin sw1 v do dropout voltage i o = 300 ma - 0.6 0.8 v i o = 400 ma - 0.6 1.1 v i o output current v o 3 8.5 v [4] 0.5 1 - a i os output short-circuit current r l 0.5 w [5] - 250 - ma i l leakage current v o = 18 v; v p = 0 v [7] - 25 250 m a power switch 2 ampli?er: pin sw2 v do dropout voltage i o = 300 ma - 0.6 0.8 v i o = 400 ma - 0.6 1.1 v i o output current v o 3 8.5 v [4] 0.5 1 - a i os output short-circuit current r l 0.5 w [5] - 250 - ma i l leakage current v o = 18 v; v p = 0 v [7] - 25 250 m a backup switch i bu backup current (dc) v bucap 3 6 v 0.4 1.5 - a v cl clamping voltage v p =30v; i o(reg2) = 100 ma - 24 28 v v do dropout voltage i o = 500 ma; (v p - v bucap ) - 0.8 1.2 v table 16. characteristics continued t amb =25 c; v dcdc ; v p = 14.4 v; r l =4 w ; measured in the test circuit figure 26 ; unless otherwise speci?ed. symbol parameter conditions min typ max unit
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TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 29 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators fig 13. low supply voltage behavior at v p > 5.5 v 001aak094 v o (v) headroom voltage 14.4 8.8 8.6 7.2 3.5 v p low v p mute activated headroom protection activated: 1) fast mute 2) discharge of svr svr voltage output voltage low v p mute released diag db2[d7] v reg3
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 30 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators fig 14. low supply voltage behavior at v p < 5.5 v por activated 14.4 8.8 8.6 7.2 3.5 v p low v p mute activated svr voltage diag db2[d7] v reg3 5.5 por has occurred 001aak095 v o (v)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 31 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators (1) f = 10 khz (channels 1 to 4). (2) f = 100 hz and 1 khz (channels 1 and 2). (3) f = 1 khz (channels 3 and 4). (4) f = 100 hz (channels 3 and 4). v p = 14.4 v. r l = 4 w . fig 15. total harmonic distortion as a function of output power (1) p o = 1 w. (2) p o = 10 w. v p = 14.4 v. r l = 4 w . fig 16. total harmonic distortion as a function of frequency mrc339 10 - 1 10 - 2 10 1 10 2 thd (%) 10 - 3 p o (w) 10 - 2 10 2 10 10 - 1 1 (1) (2) (3) (4) mrc344 10 - 1 10 - 2 1 10 thd (%) 10 - 3 f (khz) 10 - 2 10 2 10 10 - 1 1 (1) (2)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 32 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators v p = 14.4 v. r l = 600 w . f = 1 khz. fig 17. total harmonic distortion as a function of output voltage in balanced line driver mode v p = 14.4 v; r l = 4 w (1) thd = 10 %. (2) thd = 5 %. (3) thd = 0.5 %. fig 18. output power as a function of frequency mrc337 v o(rms) (v) 10 - 1 10 2 10 1 10 - 1 10 - 2 1 thd (%) 10 - 3 mrc346 f (khz) 10 - 2 10 2 10 10 - 1 1 25 20 30 p o (w) 15 (1) (2) (3)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 33 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators v p = 14.4 v; r l = 2 w (1) thd = 10 %. (2) thd = 5 %. (3) thd = 0.5 %. fig 19. output power as a function of frequency f = 1 khz; r l = 4 w (1) maximum power. (2) thd = 10 %. (3) thd = 0.5 %. fig 20. output power as a function of supply voltage mrc347 f (khz) 10 - 2 10 2 10 10 - 1 1 35 30 40 45 p o (w) 25 (1) (2) (3) v p (v) 8 20 16 12 10 18 14 001aaj118 40 60 20 80 100 p o (w) 0 (1) (2) (3)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 34 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators f = 1 khz; r l = 2 w (1) maximum power. (2) thd = 10 %. (3) thd = 0.5 %. fig 21. output power as a function of supply voltage (1) operating mode. (2) mute mode. v p = 14.4 v. r l = 4 w . v ripple = 2 v (p-p). r s = 600 w . fig 22. supply voltage rejection ratio as a function of frequency v p (v) 8 20 16 12 10 18 14 mrc334 40 60 20 80 100 p o (w) 0 (1) (2) (3) mrc341 f (khz) 10 - 1 10 1 68 76 84 svrr (db) 60 (1) (2)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 35 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators v p = 14.4 v. r l = 4 w . p o = 4 w. r s = 600 w . fig 23. channel separation v p = 14.4 v. r l = 4 w . f = 1 khz. fig 24. ampli?er power dissipation as a function of output power; all channels driven mrc338 f (khz) 10 - 2 10 2 10 10 - 1 1 70 80 60 90 100 a cs (db) 50 p o (w) 0 30 20 10 mrc342 20 30 10 40 50 p tot (w) 0
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 36 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators v p = 14.4 v. r l = 4 w . f = 1 khz. fig 25. ampli?er ef?ciency as a function of output power; all channels driven p o (w) 0 40 32 16 24 8 mrc343 40 60 20 80 100 h (%) 0
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 37 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 12. application information (1) see section 12.1 . the value of acgnd capacitor must be close to 4 the value of capacitor connected to the positive input of each channel; for emc reasons a 10 nf capacitor can be connected between each ampli?er output and ground. fig 26. test and application diagram of TDF8551J 001aaj104 backup switch enable logic standby/mute i 2 c-bus interface clip detect/diagnostic reference voltage temperature and load dump protection voltage regulator regulator 1 regulator 3 regulator 2 regulator 4 regulator 5 switch 1 switch 2 mute protection/ diagnostic 26 db/ 20 db protection/ diagnostic 26 db/ 20 db protection/ diagnostic 26 db/ 20 db protection/ diagnostic temperature and load dump protection amplifier 26 db/ 20 db mute mute mute 35 27 20 6 25 9 7 17 19 5 3 21 23 16 8 13 sgnd svr in4 in3 in2 in1 stb scl sda v p bucap acgnd pgnd1 pgnd2/tab pgnd3 pgnd4 10 14 12 15 11 22 4 2 1 18 24 32 29 34 33 31 30 37 reg2 reg1 10 m f (50 v) 100 nf reg3 reg4 reg5 sw1 sw2 v p1 diag out1+ out1 - out2+ out2 - out3+ out3 - out4+ out4 - v p2 microcontroller 14.4 v aerial motor amplifiers display mechanical drive mechanical digital audio microcontroller gnd 36 v p 1000 m f (16 v) 220 nf 220 m f (16 v) 14.4 v 14.4 v/5 v 220 nf (1) 10 m f (50 v) 100 nf 10 m f (50 v) 100 nf 10 m f (50 v) 100 nf 10 m f (50 v) 100 nf 10 m f (50 v) 100 nf 10 m f (50 v) 10 k w 100 nf r s 470 nf r s 470 nf r s 470 nf r s 470 nf 2.2 m f (4 470 nf) 22 m f TDF8551J 220 nf 220 nf 26 v dcdc 2200 m f (16 v) regulator 6 28 reg6 10 m f (50 v) 100 nf bus controller (1)
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 38 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 12.1 supply decoupling see figure 26 to figure 30 . the high frequency 220 nf decoupling capacitors connected to power supply voltage pins 6 and 20 should be located as close as possible to these pins. it is important to use good quality capacitors. these capacitors should be able to suppress high voltage peaks that can occur on the power supply if several audio channels are accidentally shorted to the power supply simultaneously, due to the activation of current protection. good results have been achieved using 0805 case-size capacitors (x7r material, 220 nf) located close to power supply voltage pins 6 and 20. if a dc-to-dc converter is used to supply regulator 3, the recommendations of the converter manufacturer relating to decoupling must be followed.
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 39 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators fig 27. printed-circuit board layout of test and application circuit showing top copper layer viewed from top 001aai763 fig 28. printed-circuit board layout of test and application circuit showing bottom copper layer viewed from top 001aai762
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 40 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators fig 29. printed-circuit board layout of test and application circuit showing components and top copper layout viewed from top 001aai764 fig 30. printed-circuit board layout of test and application circuit showing components and bottom copper layout viewed from top 001aai765
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 41 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 12.2 beep input circuit beep input circuit to amplify the beep signal from the microcontroller to all 4 ampli?ers (gai n = 0 db). note that this circuit will not affect ampli?er performance. 12.3 noise the outputs of regulators 1 to 6 are designed to give very low noise with good stability. the noise output voltage depends on output capacitor c o . t ab le 17 shows the effect of the output capacitor on the noise ?gure. [1] measured in the frequency range 20 hz to 80 khz; at i o(reg) = 10 ma. 12.4 stability the regulators are made stable by connecting capacitors to the regulator outputs. the stability can be guaranteed with almost any output capacitor if its equivalent series resistance (esr) stays below the esr curve shown in figure 32 . if an electrolytic capacitor is used, its behavior with temperature can cause oscillations at extremely low temperature. oscillation problems can be avoided by adding a 47 nf capacitor in parallel with the electrolytic capacitor. the following example describes how to select the value of output capacitor. fig 31. application diagram for beep input 001aaj150 from microcontroller 1.7 k w 0.22 m f 100 w 2.2 m f 47 pf TDF8551J acgnd table 17. regulator noise ?gures regulator noise ?gure ( m v) [1] c o = 10 m f c o = 47 m f c o = 100 m f 1 225 180 145 2 700 600 390 3 100 85 65 4 235 205 175 5 315 285 225 6 710 550 340
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 42 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 12.4.1 example regulator 2 regulator 2 is stabilized with an electrolytic output capacitor of 10 m f which has an esr of 4 w . at t amb = - 30 c the capacitor value decreases to 3 m f and its esr increases to 28 w which is above the maximum allowed as shown in figure 32 , and which will make the regulator unstable. to avoid problems with stability at low temperatures, the recommended solution is to use tantalum capacitors. either use a tantalum capacitor of 10 m f, or an electrolytic capacitor with a higher value. fig 32. curve for selecting the value of output capacitors for regulators 1 to 6 0 0.1 1 10 c ( m f) mgl912 stable region maximum esr 100 esr ( w ) 20 15 10 5
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 43 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 13. package outline fig 33. package outline sot725-1 (dbs37p) unit a d (1) e (1) references outline version european projection issue date iec jedec jeita mm 19 a 2 4.65 4.35 b p 0.60 0.45 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.25 mm maximum per side are not included. sot725-1 - - - - - - - - - 0 10 20 mm scale l e a c a 2 m l 3 l 4 l 2 q w m b p d z e 1 e 2 e 1 37 dbs37p: plastic dil-bent-sil power package; 37 leads (lead length 6.8 mm) sot725-1 v m d x h e h non-concave view b : mounting base side b d c z (1) dee 1 e 2 l 3 d h e h lm 0.5 0.3 42.2 41.7 37.8 37.4 12 2 15.9 15.5 14 1.15 0.85 l 2 3.9 3.1 l 4 22.9 22.1 8 3.30 2.65 2.1 1.8 3.4 3.1 4 6.8 q j 0.25 w 0.6 v 0.03 x j 01-11-14 02-11-22
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 44 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 14. soldering of through-hole mount packages 14.1 introduction to soldering through-hole mount packages this text gives a very brief insight into wave, dip and manual soldering. wave soldering is the preferred method for mounting of through-hole mount ic packages on a printed-circuit board. 14.2 soldering by dipping or by solder wave driven by legislation and environmental forces the worldwide use of lead-free solder pastes is increasing. typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250 c or 265 c, depending on solder material applied, snpb or pb-free respectively. the total contact time of successive solder waves must not exceed 5 seconds. the device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the speci?ed maximum storage temperature (t stg(max) ). if the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. 14.3 manual soldering apply the soldering iron (24 v or less) to the lead(s) of the package, either below the seating plane or not more than 2 mm above it. if the temperature of the soldering iron bit is less than 300 c it may remain in contact for up to 10 seconds. if the bit temperature is between 300 c and 400 c, contact may be up to 5 seconds. 14.4 package related soldering information [1] for sdip packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board. [2] for pmfp packages hot bar soldering or manual soldering is suitable. table 18. suitability of through-hole mount ic packages for dipping and wave soldering package soldering method dipping wave cpga, hcpga - suitable dbs, dip, hdip, rdbs, sdip, sil suitable suitable [1] pmfp [2] - not suitable
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 45 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 15. abbreviations 16. revision history table 19. abbreviations acronym description bcdmos bipolar complementary double-diffused metal-oxide semiconductor dsp digital signal processor emc electromagnetic compatibility lsb least signi?cant bit msb most signi?cant bit por power-on reset table 20. revision history document id release date data sheet status change notice supersedes TDF8551J_2 20090818 product data sheet - TDF8551J_1 modi?cations: ? t ab le 16 char acter istics changed minimum output current (i o ) regulator 3 pin reg3. TDF8551J_1 20081202 preliminary data sheet - -
TDF8551J_2 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 02 18 august 2009 46 of 47 nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators 17. legal information 17.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 17.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 17.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 17.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. i 2 c-bus logo is a trademark of nxp b.v. 18. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors TDF8551J 4 45 w power ampli?er with six voltage regulators ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 18 august 2009 document identifier: TDF8551J_2 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 19. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 1.1 ampli?ers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.2 voltage regulators and switches . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 4 quick reference data . . . . . . . . . . . . . . . . . . . . . 2 5 ordering information . . . . . . . . . . . . . . . . . . . . . 4 6 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 5 7 pinning information . . . . . . . . . . . . . . . . . . . . . . 6 7.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 7.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 7 8 functional description . . . . . . . . . . . . . . . . . . . 8 8.1 start-up. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.2 start-up and shutdown timing. . . . . . . . . . . . . . 8 8.3 power-on reset and supply voltage spikes . . . . 8 8.4 diagnostic output . . . . . . . . . . . . . . . . . . . . . . . 8 8.5 ampli?ers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.5.1 muting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 8.5.2 temperature protection. . . . . . . . . . . . . . . . . . . 9 8.5.3 offset detection. . . . . . . . . . . . . . . . . . . . . . . . . 9 8.5.4 speaker protection . . . . . . . . . . . . . . . . . . . . . . 9 8.5.5 line driver mode . . . . . . . . . . . . . . . . . . . . . . . . 9 8.5.6 input and ac ground capacitor values . . . . . . . 9 8.5.7 load detection . . . . . . . . . . . . . . . . . . . . . . . . 10 8.5.7.1 dc load detection . . . . . . . . . . . . . . . . . . . . . . 10 8.5.7.2 ac load detection . . . . . . . . . . . . . . . . . . . . . . 10 8.5.7.3 load detection procedure . . . . . . . . . . . . . . . . 11 8.5.8 low headroom protection . . . . . . . . . . . . . . . . 11 8.6 voltage regulators and switches . . . . . . . . . . . 11 8.6.1 standby regulator outputs. . . . . . . . . . . . . . . . 12 8.6.2 backup capacitor . . . . . . . . . . . . . . . . . . . . . . 12 8.6.3 backup function . . . . . . . . . . . . . . . . . . . . . . . 12 8.6.4 power switches . . . . . . . . . . . . . . . . . . . . . . . . 13 8.6.5 external dc-to-dc converter . . . . . . . . . . . . . 13 8.6.6 protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 8.6.7 temperature protection. . . . . . . . . . . . . . . . . . 13 8.7 i 2 c-bus speci?cation . . . . . . . . . . . . . . . . . . . . 14 9 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 20 10 thermal characteristics. . . . . . . . . . . . . . . . . . 21 10.1 quality speci?cation . . . . . . . . . . . . . . . . . . . . 21 11 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 22 12 application information. . . . . . . . . . . . . . . . . . 37 12.1 supply decoupling . . . . . . . . . . . . . . . . . . . . . 38 12.2 beep input circuit . . . . . . . . . . . . . . . . . . . . . . 41 12.3 noise. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 12.4 stability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41 12.4.1 example regulator 2 . . . . . . . . . . . . . . . . . . . . 42 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . 43 14 soldering of through-hole mount packages . 44 14.1 introduction to soldering through-hole mount packages . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 14.2 soldering by dipping or by solder wave . . . . . 44 14.3 manual soldering . . . . . . . . . . . . . . . . . . . . . . 44 14.4 package related soldering information . . . . . . 44 15 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . 45 16 revision history . . . . . . . . . . . . . . . . . . . . . . . 45 17 legal information . . . . . . . . . . . . . . . . . . . . . . 46 17.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 46 17.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 17.3 disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 46 17.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . 46 18 contact information . . . . . . . . . . . . . . . . . . . . 46 19 contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47

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